IndiumV3, Main, Repository, bibRecord, 000D76

Electron Transport in InAsSb-Based nBn Photodetector Structures

Identifieur interne : 000D76 ( Main/Repository ); précédent : 000D75; suivant : 000D77

Electron Transport in InAsSb-Based nBn Photodetector Structures

Auteurs : RBID : Pascal:13-0118031

Descripteurs français

Pascal (Inist)
- Photodétecteur, Champ magnétique, Effet Hall, Haute résolution, Analyse spectre, Couche barrière, Dopage, Densité électron, Absorbeur, Matériau absorbant, Mobilité électron, Diffusion impureté, Impureté, Densité défaut, Antimoniure d'indium, Composé ternaire, Nitrure de niobium, InAsSb, NbN, Structure nBn.
Wicri :
- concept : Dopage.

English descriptors

KwdEn :
- Absorbent material, Absorber, Barrier layer, Defect density, Doping, Electron density, Electron mobility, Hall effect, High resolution, Impurity, Impurity scattering, Indium antimonides, Magnetic field, Niobium nitride, Photodetector, Spectrum analysis, Ternary compound, nBn structure.

Abstract

Magnetic-field-dependent Hall-effect measurements and high-resolution mobility spectrum analysis have been employed to determine electronic transport parameters in InAsSb-based nBn structures. Three samples were studied, with nominally identical epitaxial layer structure but with barrier layers of different compositions. Two separate well-defined electron species, associated with the two distinct doping regions, were identified. The extracted electron concentrations were found to be in excellent agreement with the nominal doping density of the absorber and the back contact layers for all samples studied. For all samples, electron mobility appears to be limited by impurity scattering, whereas the relatively small differences in extracted mobility values between samples are likely to be due to unintentional variations in ionized impurity and/or defect concentration in the samples.

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Links to Exploration step

Pascal:13-0118031

Le document en format XML

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<title level="j" type="main">I.E.E.E. transactions on electron devices</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorbent material</term>
<term>Absorber</term>
<term>Barrier layer</term>
<term>Defect density</term>
<term>Doping</term>
<term>Electron density</term>
<term>Electron mobility</term>
<term>Hall effect</term>
<term>High resolution</term>
<term>Impurity</term>
<term>Impurity scattering</term>
<term>Indium antimonides</term>
<term>Magnetic field</term>
<term>Niobium nitride</term>
<term>Photodetector</term>
<term>Spectrum analysis</term>
<term>Ternary compound</term>
<term>nBn structure</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Photodétecteur</term>
<term>Champ magnétique</term>
<term>Effet Hall</term>
<term>Haute résolution</term>
<term>Analyse spectre</term>
<term>Couche barrière</term>
<term>Dopage</term>
<term>Densité électron</term>
<term>Absorbeur</term>
<term>Matériau absorbant</term>
<term>Mobilité électron</term>
<term>Diffusion impureté</term>
<term>Impureté</term>
<term>Densité défaut</term>
<term>Antimoniure d'indium</term>
<term>Composé ternaire</term>
<term>Nitrure de niobium</term>
<term>InAsSb</term>
<term>NbN</term>
<term>Structure nBn</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Dopage</term>
</keywords>
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<front><div type="abstract" xml:lang="en">Magnetic-field-dependent Hall-effect measurements and high-resolution mobility spectrum analysis have been employed to determine electronic transport parameters in InAsSb-based nBn structures. Three samples were studied, with nominally identical epitaxial layer structure but with barrier layers of different compositions. Two separate well-defined electron species, associated with the two distinct doping regions, were identified. The extracted electron concentrations were found to be in excellent agreement with the nominal doping density of the absorber and the back contact layers for all samples studied. For all samples, electron mobility appears to be limited by impurity scattering, whereas the relatively small differences in extracted mobility values between samples are likely to be due to unintentional variations in ionized impurity and/or defect concentration in the samples.</div>
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<fC01 i1="01" l="ENG"><s0>Magnetic-field-dependent Hall-effect measurements and high-resolution mobility spectrum analysis have been employed to determine electronic transport parameters in InAsSb-based nBn structures. Three samples were studied, with nominally identical epitaxial layer structure but with barrier layers of different compositions. Two separate well-defined electron species, associated with the two distinct doping regions, were identified. The extracted electron concentrations were found to be in excellent agreement with the nominal doping density of the absorber and the back contact layers for all samples studied. For all samples, electron mobility appears to be limited by impurity scattering, whereas the relatively small differences in extracted mobility values between samples are likely to be due to unintentional variations in ionized impurity and/or defect concentration in the samples.</s0>
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<s5>01</s5>
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<s5>01</s5>
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<s5>02</s5>
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<s5>02</s5>
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<s5>02</s5>
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<s5>03</s5>
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<s5>03</s5>
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<s5>03</s5>
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<s5>04</s5>
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<s5>04</s5>
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<s5>04</s5>
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<s5>05</s5>
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<s5>05</s5>
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<s5>05</s5>
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<s5>06</s5>
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<s5>06</s5>
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<s5>07</s5>
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<s5>07</s5>
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<s5>08</s5>
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<s5>08</s5>
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<s5>08</s5>
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<s5>09</s5>
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<s5>09</s5>
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<s5>09</s5>
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<s5>10</s5>
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<s5>11</s5>
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<s5>12</s5>
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<s5>12</s5>
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<s5>13</s5>
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<s5>13</s5>
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<s5>13</s5>
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<fC03 i1="14" i2="X" l="FRE"><s0>Densité défaut</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Defect density</s0>
<s5>14</s5>
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<fC03 i1="14" i2="X" l="SPA"><s0>Densidad defecto</s0>
<s5>14</s5>
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<fC03 i1="15" i2="3" l="FRE"><s0>Antimoniure d'indium</s0>
<s2>NK</s2>
<s5>22</s5>
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<s2>NK</s2>
<s5>22</s5>
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<s5>23</s5>
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<s5>23</s5>
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<s5>23</s5>
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<s5>24</s5>
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<s5>24</s5>
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<s5>24</s5>
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<fC03 i1="18" i2="X" l="FRE"><s0>InAsSb</s0>
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<s5>82</s5>
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<s4>INC</s4>
<s5>83</s5>
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<fC03 i1="20" i2="X" l="FRE"><s0>Structure nBn</s0>
<s4>CD</s4>
<s5>96</s5>
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<fC03 i1="20" i2="X" l="ENG"><s0>nBn structure</s0>
<s4>CD</s4>
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<s5>15</s5>
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<s5>16</s5>
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<s5>16</s5>
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<fN21><s1>091</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
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Electron Transport in InAsSb-Based nBn Photodetector Structures

Electron Transport in InAsSb-Based nBn Photodetector Structures

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